Abstract

The present paper proposes an exhaustive comparison between the two methods of extracting the nonlinear parameters of the NE72084 transistor. For this purpose, we have developed a continuous and pulsed automatized set up along with a fitting program that permits us to obtain the total nonlinear transistor model. Furthermore, a software program that permits us to extract the total linear equivalent circuit measuring the scattering parameters in the 2-8 GHz frequency band at several polarization points in order to obtain the quasi-static nonlinear model has been developed. Simulations taking into account low frequency dispersion permit comparisons between the model obtained from pulsed measurements and the quasi-static approach. Experimental measurements show the agreement of the two different models.