Abstract

In this work it is proven that on the load reflection coefficient plane of a microwave low noise GaAs MESFET amplifier a locus of optimum values {TLO } does exist depending only on the transistor noise and scattering parameters and on the operating power gain to be obtained. The existence of this locus is proven in a rigorous way for lossless input equalizer amplifiers. The knowledge of {TLO } allows us to foresee the noise figure, the amplifier input reflection coefficient and any other performance useful in the low noise amplifier design.