Abstract

Based on 2D hydrodynanuc energy model which features transient simulation of degenerate hot elec­tron transport in submicron MODFETs, we present a detailed analysis of single quantum well (SQW) AlGaAs/GaAs/AlGaAs MODFETs which are proposed to enhance and optimize the device millimetric performance. The structure have been studied for different QW widths as well as different buffer AlGaAs transport parameters. It is demonstrated that hot electron effects set an upper limit on the maximum available gain and maximum oscillation frequency of the structure.