Wang, H. ; Algani, C. ; Caquot, E. ; Dangla, J.
(1990)
Hybrid HBT oscillator and mixer.
In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
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Abstract
The HBT presents inherent low 1/f noise characteristic, which makes HBT a very promising candidate, compared to GaAs MESFET or Silicon BJT, for these high frequency low phase noise applications [1,2,3]. In this paper, the preliminary measured results on the conversion factor of low frequency noise to the phase noise of HBT oscillator will be presented, together with the first results of our HBT mixer.
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