Abstract

A novel Monte Carlo model of hole transport in GaAs intended for self-consistent device simulation is described. The model employs an isotropic effective mass representation of the valence band structure and energy dependent nonparabolicity factors. This comprises a simplification of numerical representations of the valence bands. Results are presented, and compare well with reported experimental and Monte Carlo data. Hole energy and momentum relaxation times are calculated and the effect of split-off holes on transport characteristics is shown to be negligible.