Abstract

Diffusion technology, which is well introduced for silicon, is still problematic for GaAs and other compound semiconductors. Spin-on films containing the dopant and protecting at the same time the surface might bring a solution to the problems. We examined a commercially available spin-on film containing Zn as p-dopant for the production of deep diffused p-n-junctions and of pin diodes. The technological problems - mainly a very slow diffusion but also contamination with other materials - are discussed in detail. The electrical characteristics of the manufactured diodes are presented and the dependence of different parameters on diode size and n"-layer thickness is discussed.