Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC

Wieszt, A. ; Dietrich, R. ; Lee, J.-S. ; Vescan, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M. ; Sledzik, H. (2000) Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
[thumbnail of GAAS_8_3.pdf]
Anteprima
Documento PDF
Download (111kB) | Anteprima

Abstract

We report on the DC,the mall ignal and the RF power performance of AlGaN/GaN HFET grown on emi in ulating (.i.)SiC ubstrate.DC characterization how a record transconductance of 300mS/mm for a device ith a gatelength of 0.3 µm.Load pull measurements at 10 GHz were performed,indicating output power levels above 4Watts cw for a unpas ivated 1.6mm device.Finally,tandard equivalent circuit parameter are extracted and verified for devices with different gatewidths.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Wieszt, A.
Dietrich, R.
Lee, J.-S.
Vescan, A.
Leier, H.
Piner, E.L.
Redwing, J.M.
Sledzik, H.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:40
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^