Wieszt, A. ; Dietrich, R. ; Lee, J.-S. ; Vescan, A. ; Leier, H. ; Piner, E.L. ; Redwing, J.M. ; Sledzik, H.
(2000)
Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text available as:
Preview |
PDF
Download (111kB) | Preview |
Abstract
We report on the DC,the mall ignal and the RF power performance of AlGaN/GaN HFET grown on emi in ulating (.i.)SiC ubstrate.DC characterization how a record transconductance of 300mS/mm for a device ith a gatelength of 0.3 µm.Load pull measurements at 10 GHz were performed,indicating output power levels above 4Watts cw for a unpas ivated 1.6mm device.Finally,tandard equivalent circuit parameter are extracted and verified for devices with different gatewidths.
Abstract
Other metadata
Downloads
Downloads
Staff only:
