Traverso, P.A. ; Pirazzini, M. ; Santarelli, A. ; Filicori, F. ; Raffo, A.
(2005)
Automated microwave device characterization set-up based on a technology-independent generalized Bias System.
In: Proceedings of the 22nd IEEE Instrumentation and Measurement Technology Conference. IMTC 2005., 16-19 maggio 2005, Ottawa, Canada.
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Abstract
In this paper an automated laboratory set-up for the characterization of micro- and millimeter-wave electron devices under DC, small- and large-signal operation is described, which is based on a generalized, technology-independent bias system. The biasing parameters adopted, which are a linear combination between currents and voltages at the device ports, allow for a complete characterization of the desired empirical data (e.g. multi-frequency S-matrix) throughout all the regions in which the quiescent operation of the device can be conventionally divided, without any need for the switch between different biasing strategies. The look-up tables of experimental data obtained, which are carried out homogeneously with respect to the same couple of bias parameters, independently of the quiescent regions investigated, are particularly suitable for the characterization of empirical non-linear dynamic models for the electron device.
Abstract
In this paper an automated laboratory set-up for the characterization of micro- and millimeter-wave electron devices under DC, small- and large-signal operation is described, which is based on a generalized, technology-independent bias system. The biasing parameters adopted, which are a linear combination between currents and voltages at the device ports, allow for a complete characterization of the desired empirical data (e.g. multi-frequency S-matrix) throughout all the regions in which the quiescent operation of the device can be conventionally divided, without any need for the switch between different biasing strategies. The look-up tables of experimental data obtained, which are carried out homogeneously with respect to the same couple of bias parameters, independently of the quiescent regions investigated, are particularly suitable for the characterization of empirical non-linear dynamic models for the electron device.
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(Paper)
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DOI
Deposit date
07 Apr 2006
Last modified
16 May 2011 12:02
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
07 Apr 2006
Last modified
16 May 2011 12:02
URI
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