Pozela, J. ; Pozela, K. ; Juciene, V.
(2000)
Decrease of Modfet channel conductivity with increasing sheet electron concentration.
In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract
The great decrease of electron mobility with increasing sheet electron concentration ns in modulation-doped AlGaAs/GaAs/AlGaAs quantum wells is observed. This effect is explained by increasing scattering of degenerated electrons by polar optical phonons. At ns >10 15 m -2 , the mobility decrease exceeds the increase of ns, and the channel conductivity decreases with increasing ns.
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