Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs

Meng, C.C. ; Chen, J. W. ; Chang, C.H. ; Chen, L.P. ; Lee, H.Y. ; Kuan, J.F. (2000) Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Full text disponibile come:
[thumbnail of GAAS10_3.pdf]
Anteprima
Documento PDF
Download (54kB) | Anteprima

Abstract

Knee voltage, pinch-off voltage, breakdown voltage and maximum rf drain current clip output I-V waveform of a MESFET and cause gain compression and power saturation. Thus, verage rf gate and drain currents can be used to determine gain compression mechanisms for MESFETs. There is a distinct signature in average rf gate and drain currents for each gain compression mechanism. Narrow recess and wide recess MESFET exhibits different average rf gate and drain current behavior when a device is biased toward maximum drain current. The average rf drain current decreases for a wide-recessed MESFET when the device is biased toward maximum drain current and tuned for maximum output power.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Meng, C.C.
Chen, J. W.
Chang, C.H.
Chen, L.P.
Lee, H.Y.
Kuan, J.F.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:41
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^