Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models

Sommet, R. ; Lopez, D. ; Quéré, R. (2000) Electrothermal harmonic balance simulation of an INGAP/GAAS HBT based on 3D thermal and semiconductor transport models. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

A parallel implementation of the direct coupling of InGaP/GaAs HBT transport equations has been included in an Harmonic Balance simulator. Several results such as a class AB amplifier for mobile communication study and a stability analysis of “crunch effect” in multi-finger HBT have been performed.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Sommet, R.
Lopez, D.
Quéré, R.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:41
URI

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