Millimeter-wave FET modeling based on a frequency extrapolation approach

Cidronali, A. ; Collodi, G. ; Santarelli, A. ; Vannini, G. ; Toccafondi, C. (2000) Millimeter-wave FET modeling based on a frequency extrapolation approach. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range. The frequency-extrapolation approach takes advantage from a physically-expected, smooth behavior of suitably defined elementary active devices connected to a passive distributed network. On this basis, small-signal millimeter-wave FET modeling becomes an affordable task in any laboratory equipped with a standard microwave vector network analyzer and electromagnetic simulation capabilities. In the paper, wide experimental validation of the proposed model up to 110GHz is presented for PHEMT devices with different sizes and bias conditions.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Cidronali, A.
Collodi, G.
Santarelli, A.
Vannini, G.
Toccafondi, C.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:42
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