Modeling of GaN-based heterostructure devices

Sacconi, Fabio ; Di Carlo, A. ; Della Sala, F. ; Lugli, P. (2000) Modeling of GaN-based heterostructure devices. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.

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Abstract

Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors through an optimized effective mass approach based on the self-consistent solution of the Schrödinger and Poisson equations coupled to a quasi-2D model for the current flow.

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