Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation

Bue, F. ; Gaquière, C. ; Hue, X. ; Boudart, B. ; Crosnier, Y. ; De Jaeger, J.C. ; Carnez, B. ; Pons, D. (2000) Influence of recess and epilayers in the 26 – 40 GHz band HEMT’s intermodulation. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

The comparison of the linearity performance for three PHEMTs have been investigated in Ka band. The studied transistors are a single recessed PHEMT, a double recessed PHEMT and a double recessed dual channel PHEMT. The main result is : at a given output power level, the double recess allows a large improvement of the intermodulation ratio (IMR), thanks to its higher drain-source bias voltage capability, compared to the single recess. The second result is : the double recessed PHEMTs comparison shows that the dual channel, thanks to a more wide and uniform ransconductance distribution than the single channel, is a better solution for linearity application at 26GHz.

Abstract
Document type
Conference or Workshop Item (Poster)
Creators
CreatorsAffiliationORCID
Bue, F.
Gaquière, C.
Hue, X.
Boudart, B.
Crosnier, Y.
De Jaeger, J.C.
Carnez, B.
Pons, D.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:43
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