Abstract

This paper presents the design and performance o X-band MEMS switches built in microstrip technology.The switches result in an insertion loss of less than 0.1 dB and a small isolation bandwidth,less than 10%,and are limited by the radial stubs band- widths.The isolation value is also not dependent on the down-state capacitance of the switch.The isolation bandwidth (less than -20 dB isolation)is improved to 8-13 GHz with the use o a π -network and two MEMS switches.The up-state insertion loss of the π switch is less than 0.25 dB.The paper demonstrates that the performance o microstrip switch circuits without via-holes is dominated by the shorting (radial)stubs,and careful design must be done to result in an acceptable bandwidth of operation.