Wide Band Series Switch Fabricated Using Metal As Sacrificial layer

Cai, Yongming ; Katehi, Linda P.B. (2000) Wide Band Series Switch Fabricated Using Metal As Sacrificial layer. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

Series switches with metal-to-metal contact have been fabricated to operate from dc to 40 GHz. The insertion loss has been measured to be less than 0.4 dB at 5 GHz and 0.8 dB at 40 GHz when switch is on and the isolation ranges from 38 dB at 2 GHz to 15 dB at 40 GHz when the switch is off. The results agree well with simulation by Zeland IE3D. Cantilever beam is used as the mechanical structure and CPW line works as the transmission line. The cantilever is made of SiO2 and Al is used as the sacrificial layer.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Cai, Yongming
Katehi, Linda P.B.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:44
URI

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