Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range

Alekseev, Egor ; Hsu, Shawn S.H. ; Pavlidis, Dimitris (2000) Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

GaN-based HEMT Microwave Monolithic Integrated Circuit (MMIC) attenuators were realized for the first time. The MMICs employed AlGaN/GaN HEMTs fabricated by optical contact lithography (Lg=1µm) with high current gain (fT) and maximum power gain (fMAX) cutoff frequencies of 17 and 24GHz, respectively. The MMIC attenuators employing three 100µm-wide AlGaN/GaN HEMTs in π -configuration had minimum insertion of 4dB, high dynamic range (>30dB), and broadband operation (up to 18GHz). On-wafer power characterization at 8GHz confirmed successful operation of the GaN-based attenuator MMICs at power density exceeding 15W/mm.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Alekseev, Egor
Hsu, Shawn S.H.
Pavlidis, Dimitris
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:44
URI

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