Novel Series and Shunt MEMS Switc Geometries for X-Band Applications

Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2000) Novel Series and Shunt MEMS Switc Geometries for X-Band Applications. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
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Abstract

In this paper,no el metal membrane series switches and inducti ely tuned shunt switches are presented.The series switch produces an isolation better than - 30 dB at 5 GHz in the up-state and return loss less than -20 dB from DC to 20 GHz. The shunt switch geometry can be modi fied to specify the resonant frequency of the switch in the down-state.The shunt switch is modeled by an equivalent CLR circuit.The MEMS membrane height is 1.5-2.5 µm,resulting in a pulldown oltage of 15-25 V.Application areas are in low-loss high-isolation communication and radar switches.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Muldavin, Jeremy B.
Rebeiz, Gabriel M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:44
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