Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs

Muldavin, Jeremy B. ; Rebeiz, Gabriel M. (2001) Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs. In: Gallium Arsenide applications symposium. GAAS 2001, 24-28 september 2001, London.
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Abstract

This paper presents a metal-to-metal contact MEMS shunt switch suitable for DC-40 GHz applications. A novel pull-down electrode is used which applies the electrostatic force at the same lo-cation as the metal-to-metal contact area. A contact resistance of 0.15 − 0.35 is repeatably achieved, and results in an isolation of − 40 dB at 0.1-3 GHz. The measured isolation is still better than − 20 dB at 40 GHz. The DC-contact shunt switch is used in a se-ries/ shunt design to result in − 60 dB isolation at 5 GHz and bet-ter than − 40 dB up to 40 GHz. The application areas are in high-isolation/ low-loss switches for telecommunication and radar systems.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Muldavin, Jeremy B.
Rebeiz, Gabriel M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:46
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