Abstract

In this paper, we present some non exhaustive measurement techniques used for characterization and modeling of high power devices. Capabilities offered by pulsed measurements can be an efficient approach to deal with self-heating effects and sometimes trapping effects encountered in microwave high power devices. Pulsed techniques allow to separate self-heating and trapping effects, making like this the modeling process easier. A pulsed RF and pulsed bias load-pull system is then described as well as a time waveform measurement system. Capabilities of these two characterization tools are illustrated with results obtained on a high power silicon bipolar transistor and on a GaAs MESFET device.