Abstract

In this paper the influence of the backside metallization on a coplanar X-band low noise amplifier MMIC is described. First, we demonstrate the selection of transistor devices including the mod-elling especially with respect to the extraction of RF noise parame-ters. After that the simulation results and the layout of the LNA are presented, neglecting backside effects on coplanar circuits. Complet-ing measurements on the fabricated LNA show the influence of the backside metallization in comparison with simulation results.