W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth

Hwang, Yuh-Jing ; Wang, Huei ; Chu, Tah-Hsiung (2002) W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process. Both simulation and test results show that the mixers are with 12.25 and 11.75 dB average conversion losses, respectively. Both mixers have IF bandwidth wider than 20 GHz. The conversion loss flatness of the symmetric circuit is within ±1.25 dB. To our knowledge, these are the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixers.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Hwang, Yuh-Jing
Wang, Huei
Chu, Tah-Hsiung
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:50
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