AlGaN/GaN-heterojunction FET with inverted 2DEG Channel

Mokerov, V.G. ; Velikovskii, L.E. ; Kanametova, Z.T. ; Kaminskii, V.E. ; Sazonov, P.V. ; Graul, J. ; Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Novel heterojunction AlGaN/GaN-FET with inverted device channel is investigated.FET-heterostructures were grown by MBE on sapphire substrates. Devices were fabricated with 0,25 µ T-shaped gates,using electron beam lithography.Electron density profile under the device gate has demonstrated localization of electrons in very narrow nm-region (<10nm)at the bottom GaN/AlGaN – interface,giving direct evidence of HEMT-nature of our FET ’s.I - V-characteristics of HEMT ’s demonstrated high value of drain current Id max >1A/mm,and good extrinsic transconductance gm ext ≅140mS/mm.DC - specific output power of HEMT was 2,0W/mm.Extrinsic cut off frequency f τ ext of HEMT,determined from transconductance gm and gate-source capacitance Cgs, was 20GHz.Its intrinsic value,f τ ext ,was found to be as high as 36GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Mokerov, V.G.
Velikovskii, L.E.
Kanametova, Z.T.
Kaminskii, V.E.
Sazonov, P.V.
Graul, J.
Semchinova, O.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:51
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