AlGaN/GaN-heterojunction FET with inverted 2DEG Channel

Mokerov, V.G. ; Velikovskii, L.E. ; Kanametova, Z.T. ; Kaminskii, V.E. ; Sazonov, P.V. ; Graul, J. ; Semchinova, O. (2003) AlGaN/GaN-heterojunction FET with inverted 2DEG Channel. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Novel heterojunction AlGaN/GaN-FET with inverted device channel is investigated.FET-heterostructures were grown by MBE on sapphire substrates. Devices were fabricated with 0,25 µ T-shaped gates,using electron beam lithography.Electron density profile under the device gate has demonstrated localization of electrons in very narrow nm-region (<10nm)at the bottom GaN/AlGaN – interface,giving direct evidence of HEMT-nature of our FET ’s.I - V-characteristics of HEMT ’s demonstrated high value of drain current Id max >1A/mm,and good extrinsic transconductance gm ext ≅140mS/mm.DC - specific output power of HEMT was 2,0W/mm.Extrinsic cut off frequency f τ ext of HEMT,determined from transconductance gm and gate-source capacitance Cgs, was 20GHz.Its intrinsic value,f τ ext ,was found to be as high as 36GHz.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Mokerov, V.G.
Velikovskii, L.E.
Kanametova, Z.T.
Kaminskii, V.E.
Sazonov, P.V.
Graul, J.
Semchinova, O.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:51
URI

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