Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors

Watanabe, Noriyuki ; Uchida, Masahiro ; Yokohama, Hideo ; Araki, Gako (2003) Influence of carbon sources on thermal stability of C-doped base InP/InGaAs heterojunction bipolar transistors. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

We report effects of annealing on InP/InGaAs heterojunction bipolar transistors (HBTs) having an InGaAs base layer C-doped using CBr 4 or CBrCl 3 as the C source. It was found that ramp thermal annealing (RTA) after growth removes H atoms, which are located in C-dopedd InGaAs base layer and deactivate C acceptors, resulting in a decrease of base sheet resistance. An RTA simultaneously can deteriorate the C-doped base layer. An evaluation of base sheet resistance and dc current gain indicates that InP/InGaAs HBTs with C-doped InGaAs grown using CBrCl 3 are more stable in terms of thermal stress than those grown using CBr 4.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Watanabe, Noriyuki
Uchida, Masahiro
Yokohama, Hideo
Araki, Gako
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:51
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