Abstract

In this paper a novel method to extract the noise parameters of active devices up to millimeter wave frequencies is presented.The method is based on parameters and 50 ΩΩΩΩ noise figure measurements only;the extraction of the small-signal equivalent circuit model of the device is not required.The method may be applied to FET with low parasitic elements,e.g.devices having a coplanar layout.A brief description of the measurement set-up used to perform noise figure measurements is given.Lastly,the validity of the proposed technique is demonstrated applying it to a low noise HEMT device from NEC,and comparing the results with those of a more conventional method based on the full knowledge of the device small-signal equivalent circuit.