X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator

Kaper, Val ; Thompson, Richard ; Prunty, Tom ; Shealy, James R. (2003) X-band AlGaN/GaN HEMT MMIC Vo ltage-Controlled Oscillator. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

AmonolithicAlGaN/GaN HEMT voltage-controlled oscillator has been designed, fabricated and characterized. The oscillator design utilizes a common-gate negative resistance topol-ogy with a multi-finger interdigitated Schottky diode varactor resonator for frequency control. The VCO operating at 15V drain bias and -4 V gate bias, exhibits frequency range between 8.5 and 9.5 GHz with maximum output power of 31.8 dBm across a 50ohmload. Maximum power variation does not exceed ±0.8 dB in the oscillation frequency band. Average phase noise in the bandwith is estimated to be equal to -77 dBc/Hz at 100 kHz offset and -101 dBc/Hz at 1 MHz offset. Average tuning sensitivity is measured to be 120 MHz/V. Oscillator’s pulling figure is equal to 139 MHz for 12 dB return loss. Pushing figure is 114 MHz/V. Output power can be increased up to 35 dBm (2.1 W/mm) by setting drain bias voltage at 30 V.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kaper, Val
Thompson, Richard
Prunty, Tom
Shealy, James R.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:51
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