Abstract

Highly linear and efficient amplification is currently a hot topic in the RF/microwave community. Special interest is being paid to those low cost and simple solutions able to be implemented in current and future mobile terminals.Device-level intermodulation distortion (IMD)control represents a key element in this research effort,since it allows both the optimization of the transistor linearity performance and the development of novel device- based linearization techniques.In this paper,the main IMD characteristics of III-V FET ’s are remarked,either on small-or large-signal regime,to show the potentialities of different operating conditions for the design of highly linear amplifiers.Some promising linearization topologies,based on these characteristics,are then considered.Finally,the spatial power combining feature of certain radiating structures is incorporated in such topologies,resulting in highly integrated solutions.