NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands

Gould, P. ; Lin, J. ; Boric-Lubecke, O. (2001) NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

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Abstract

This paper describes the first reported, fully integrated, 0.25摯瑬敳獩m NMOS SPDT switch MMIC, for GSM and UMTS applications, fabricated on 10 Ωcm silicon substrate. This switch has the highest reported isolation, >44 dB below 2.2GHz, for a NMOS switch and high IIP3 (30 dBm at 900 MHz) for a 3V control voltage. Good RF port matches and <2.3 dB insertion loss are demonstrated over the whole frequency band.

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