NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands

Gould, P. ; Lin, J. ; Boric-Lubecke, O. (2001) NMOS SPDT Switch MMIC with >44 dB Isolation and 30 dBm IIP3 for Applications within GSM and UMTS bands. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
Full text disponibile come:
[thumbnail of G_13_1.pdf]
Anteprima
Documento PDF
Download (776kB) | Anteprima

Abstract

This paper describes the first reported, fully integrated, 0.25摯瑬敳獩m NMOS SPDT switch MMIC, for GSM and UMTS applications, fabricated on 10 Ωcm silicon substrate. This switch has the highest reported isolation, >44 dB below 2.2GHz, for a NMOS switch and high IIP3 (30 dBm at 900 MHz) for a 3V control voltage. Good RF port matches and <2.3 dB insertion loss are demonstrated over the whole frequency band.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Gould, P.
Lin, J.
Boric-Lubecke, O.
Settori scientifico-disciplinari
DOI
Data di deposito
17 Giu 2004
Ultima modifica
17 Feb 2016 13:33
URI

Altri metadati

Statistica sui download

Statistica sui download

Gestione del documento: Visualizza il documento

^