Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS

Nuttinck, S. ; Pinel, S. ; Gebara, E. ; Laskar, J. ; Harris, M. (2003) Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Current collapse in AlGaN/GaN HFETs is investigated at low temperatures using a transient current monitoring technique. The carrier trapping and de-trapping mechanisms are studied, and two distinct relaxation mechanisms are observed. They are associated to the presence of two close deep energy levels in the bandgap.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Nuttinck, S.
Pinel, S.
Gebara, E.
Laskar, J.
Harris, M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:52
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