Masini, Leonardo ; Pozzoni, Massimo ; Caliumi, Alberto ; Tomasini, Luciano ; Morigi, Damiana ; Lemaire, Frederic
(2001)
A fully integrated silicon-germanium X-Band VCO.
In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract
The design and realisation of a fully integrated Silicon Germanium (SiGe) X-Band Voltage Controlled Oscillator (VCO) is presented. It performs low phase noise and 10% tuning bandwidth at low voltage bias supply. The VCO, comprising integrated inductors and output transformers, is implemented in a SiGe technology which is suitable for high volume production. The features of this VCO, the adopted methodology and the herein proven potential of the technology make this work a good starting point for the design of next generation totally integrated fast PLL’s. The paper will describe also the architectures chosen and the design techniques adopted.
Abstract