An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results

Polleux, J.L. ; Moutier, F. ; Billabert, A.L. ; Rumelhard, C. ; Sönmez, E. ; Schumacher, H. (2003) An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

A first SiGe bipolar heterojunction phototransistor developed in a commercial available SiGe/Si technology is presented.Emphasis on the development of a complete numerical model for the simulation of strained- SiGe based devices is given.The SiGe HPT exhibits a dc opto-microwave power gain of 3.46dB,i.e.a responsivity with 50Ohms loads of 1.49A/W,and a –3dB bandwidth of 0.4GHz at 940nm.Power budgets are drawn with the use of the opto-microwave power gain ’s monogram chart.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Polleux, J.L.
Moutier, F.
Billabert, A.L.
Rumelhard, C.
Sönmez, E.
Schumacher, H.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:52
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