Abstract

We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas.Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs).We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients.A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.