Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W

Basaran, U. ; Berroth, M. (2003) Large-Signal Modeling of SiGe HBTs Including a New Substrate Network Extraction Method W. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract

Large-signal modeling results of SiGe HBTs with HICUM (High Current Transistor Model)are presented.Moreover,a new and robust method to determine the substrate network elements of bipolar transistors from S-parameter measurements is proposed in this work.The investigated substrate network is compatible with HICUM and includes the substrate- collector depletion capacitance,substrate resistance and capacitance.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Basaran, U.
Berroth, M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:53
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