Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D.
(2003)
W-band Metamorphic Low Noise and Power Amplifiers.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
Low noise metamorphic amplifiers fabricated on our 4” manufacturing line demonstrate 3.5 dB oise figure at 92 GHz. By tailoring the device’s material, geometry and processing, our device designers have achieved 320 mW/mm, 10 dB of small signal gain at 100 GHz, and 28% PAE at 95 GHz from a single stage, matched FET.
Abstract