Adahl, Andreas ; Zirath, Herbert
(2003)
An 1 GHz Class E LDMOS Power Amplifier.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed.The circuit is implemented with lumped and distributed elements.An output power of 6.2 W at 69 %drain efficiency with a gain of 11 dB was obtained at 1 GHz.Both simulations and measurements of the amplifier are presented within this paper.This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.
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