Abstract

The performance of RF hot-via transitions for use in chip-scale package (CSP)MMICs are presented. This is illustrated with the realization of a low noise amplifier MMIC using optimized hot-via s.Based on our standard 0.25-µ m GaAs low-noise PHEMT process,with BCB coating and backside metallization,this 2-stage lownoise microstrip amplifier mounted with bumps on a carrier substrate achieved a linear gain of 15 dB over the 15-to 32 GHz frequency range.To the author ’s knowledge,this is the first demonstration of chip-scale packaged active MMICs using hot-via transitions.