Abstract

A single supply,high linearity,high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology.The PHEMT power device features Vth=-0.65 V,Vbdg=26 V,Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm.When matched on-wafer compromise between power and efficiency,the OIP3 at peak IP3 is 40.5 1Bm for 2 GHz and 37.0 dBm for 5.8 GHz,respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45 %at 5 V under Vgs=0 V,GL=14.5 dB,OIP3=37.5 dBm.