Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures

Sugiyama, Hiroki ; Yokoyama, Haruki ; Watanabe, Kazuo ; Kobayashi, Takashi (2002) Diffusion behavior of delta-doped Si in InAlAs/InP heterostructures. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
Full text available as:
[thumbnail of GaAs_1_Sugiyama.pdf]
Preview
PDF
Download (43kB) | Preview

Abstract

Diffusion behavior of delta-doped Si in InAlAs and InP was studied by using secondary ion mass spectroscopy. A significant broadening of the profile due to postgrowth annealing was observed in In0.52Al0.48As. In contrast, the depth profile of delta-doped Si in InP was scarcely changed by annealing. This indicates that the diffusion coefficient of delta-doped Si in InP is much smaller than that in In0.52Al0.48As. Suppression of Si diffusion by using a delta-doped InP layer as the carrier supply layer (CSL) improves the thermal stability of the InP-HEMT structures.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Sugiyama, Hiroki
Yokoyama, Haruki
Watanabe, Kazuo
Kobayashi, Takashi
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:57
URI

Other metadata

Downloads

Downloads

Staff only: View the document

^