Ó hAnnaidh, Breandán ; Brazil, Thomas J.
(2003)
A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs.
In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
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Abstract
A non-linear equivalent circuit model for MOSFETs valid for DC, small and large-signal sim-ulations of high frequency circuit design is presented. The model is valid for a wide range of bias conditions and is globally continuous. Capacitances are derived from a single charge model and charge conservation is taken into account. Simulations of the model, following parameter extraction, are validated by comparisons with experimental data.
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