Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models

Santarelli, A. ; Zucchelli, G. ; Paganelli, R. ; Vannini, G. ; Filicori, F. (2001) Equivalent-voltage description of low-frequency dispersive effects in large-signal fet models. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device controlled by equivalent port voltages and it is suitable for modelling based on standard nonlinear dynamic approaches, such as lumped-element equivalent circuits. The proposed approach is justified on the basis of a physically-consistent, charge-controlled description of the device, but the results are general and provide a valuable tool for taking into account dispersive effects in FETs by means of an intuitive circuit solution, in the framework of any existing nonlinear dynamic model of the associated non-dispersive device. The new equivalent-voltage description, identified on the basis of conventional measurements carried out under static and small-signal dynamic operating conditions, allows for the accurate prediction of dispersive effects above the frequency cut-off, but the formulation is still compatible, without for al modification, for the modelling of the device behaviour under signal excitations having spectral components in the dispersive low-frequency range. Preliminary results are presented which conferm the validity of the proposed approach.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Santarelli, A.
Zucchelli, G.
Paganelli, R.
Vannini, G.
Filicori, F.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:34
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