0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

Bollaert, S. ; Wallart, X. ; Lepilliet, S. ; Cappy, A. ; Jalaguier, E. ; Pocas, S. ; Aspar, B. (2001) 0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bollaert, S.
Wallart, X.
Lepilliet, S.
Cappy, A.
Jalaguier, E.
Pocas, S.
Aspar, B.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:34
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