Fagan, Christopher J. ; Snowden, Christopher M.
(2001)
Electro-Thermal modelling of very High power Microwave bipolar Junction transistors.
In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract
This paper describes a new approach to accurately characterise very high power, Si BJT, devices capable of delivering powers in excess of 250W, at L band, in a class C amplifier configuration. Conventional modelling approaches are not suitable for large power structures. An alternative electro-thermal, equivalent circuit model, has been constructed using a novel hierarchical approach. The thermal dependence of the device characterisation is removed during the extraction of the electrical circuit and is reinserted, within the model, using a suitably complex thermal network, determined using a fully physical thermal simulator. Theoretical and experimental results are shown for steady state and pulsed amplifier operation.
Abstract
This paper describes a new approach to accurately characterise very high power, Si BJT, devices capable of delivering powers in excess of 250W, at L band, in a class C amplifier configuration. Conventional modelling approaches are not suitable for large power structures. An alternative electro-thermal, equivalent circuit model, has been constructed using a novel hierarchical approach. The thermal dependence of the device characterisation is removed during the extraction of the electrical circuit and is reinserted, within the model, using a suitably complex thermal network, determined using a fully physical thermal simulator. Theoretical and experimental results are shown for steady state and pulsed amplifier operation.
Document type
Conference or Workshop Item
(Paper)
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Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
URI
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