Electro-Thermal modelling of very High power Microwave bipolar Junction transistors

Fagan, Christopher J. ; Snowden, Christopher M. (2001) Electro-Thermal modelling of very High power Microwave bipolar Junction transistors. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
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Abstract

This paper describes a new approach to accurately characterise very high power, Si BJT, devices capable of delivering powers in excess of 250W, at L band, in a class C amplifier configuration. Conventional modelling approaches are not suitable for large power structures. An alternative electro-thermal, equivalent circuit model, has been constructed using a novel hierarchical approach. The thermal dependence of the device characterisation is removed during the extraction of the electrical circuit and is reinserted, within the model, using a suitably complex thermal network, determined using a fully physical thermal simulator. Theoretical and experimental results are shown for steady state and pulsed amplifier operation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Fagan, Christopher J.
Snowden, Christopher M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:35
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