Abstract

RF performance and improved DC characteristics were observed for GaN-based HEMTs using epitaxial layers grown on silicon via the SIGANTIC™ growth technique. The AlGaN/GaN HEMTs employed optical gate lithography (Lg = 1 µm) in the two-finger pi configuration. Measured devices exhibited good DC performance, with maximum transconductance and current densities of 110 mS/mm and 470 mA/mm respectively. A special technique based on current injection was used for performance evaluation and drain-to-source breakdown voltages VDS BD ~ 25 V – 35 V were observed. Microwave characteristics for these devices were also promising, where high current gain and maximum power gain frequencies of 5.9 GHz and 12 GHz, respectively.