Abstract

Starting from an empirical non-linear model developed for deep sub-micron channel MOSFETs, we present a new model for floating body SOI MOSFETs. It introduces a new non-linear current model for the kink effect, which takes into account of the related frequency dispersion. The model reproduces very well the AC experimental properties related to the kink effect in floating body devices. As an application, it is used in the framework of large signal simulations to study the impact of the kink effect on the third order intermodulation point. Index Terms — Non linear RF modeling, MOS SOI transistors, low frequency effects, kink effect, intermodulation.