Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier

Kimura, Koichi ; Seki, Masato ; Matsumura, Nobuhisa ; Honjo, Kazuhiko (2004) Improvement in ACLR Asymmetry forW-CDMA InGaP/GaAs HBT Power Amplifier. In: Gallium Arsenide applications symposium. GAAS 2004, 11-12 ottobre.
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Abstract

Asymmetry in Adjacent Channel Leakage power Ratio (ACLR) has been often observed in high power amplifiers for digital wireless communication systems such as W-CDMA. This paper describes a method for reducing the asymmetry by controlling bias circuit impedance at sub harmonics. By shortening both at 4MHz and 8MHz at the bias circuits, an 8.37-dB ACLR asymmetry could be suppressed to a 5.05-dB ACLR asymmetry, where a 10.5-dB 3rd order Inter Modulation Distortion (IMD3) asymmetry could also be successfully improved to a 1.8-dB IMD3 asymmetry.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Kimura, Koichi
Seki, Masato
Matsumura, Nobuhisa
Honjo, Kazuhiko
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:09
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