Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module

Tkachenko, Y. ; Boerman, S. ; Chung, H-C. ; DiCarlo, P. ; Gerard, M. ; Gering, J. ; Hu, J. ; Klimashov, A. ; Kwok, K. ; Reginella, P. ; Sprinkle, S. ; Wei, C. ; Yang, Y. (2004) Large-Signal Nonlinear Model of a Highly Integrated Quad-Band GSM Transmit Front-End Module. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

A large-signal nonlinear model was developed for a highly integrated quad-band (UGSM/EGSM/DCS/PCS) transmit front-end module (TX-FEM). The model includes separately validated large-signal nonlinear models of HBT amplifiers; large-signal nonlinear PHEMT switch models; large-signal nonlinear Si BJT PA controller model; largesignal EM-co-simulated model of a dual-band directional coupler-detector, including large-signal GaAs MESFET diodes; and Momentum or lumped element based model of the multi-chip module (MCM) level passive networks. To authors’ best knowledge this is the highest complexity large-signal transistor-based model of a radio sub-system ever reported.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Tkachenko, Y.
Boerman, S.
Chung, H-C.
DiCarlo, P.
Gerard, M.
Gering, J.
Hu, J.
Klimashov, A.
Kwok, K.
Reginella, P.
Sprinkle, S.
Wei, C.
Yang, Y.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:10
URI

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