Enhancing the Device Performance of III-V Based Bipolar Transistors

Lutz, C.R. ; Deluca, P.M. ; Stevens, K.S. ; Landini, B.E. ; Welser, R.E. ; Welty, R.J. ; Asbeck, P.M. (2002) Enhancing the Device Performance of III-V Based Bipolar Transistors. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

Superior DC and RF performance are obtained using InGaP/GaInAsN and InP/GaInAs double heterojunction bipolar transistors with compositionally graded base layers. By grading the base layer energy band-gap, we achieve nearly a 100% improvement in DC current gain and as much as a 15% increase in the unity gain cutoff frequency (ft) relative to baseline constant-composition base layer devices. In InGaP/GaInAsN DHBTs, DC current gains as high as 250 and cutoff frequencies of 60 GHz are demonstrated for devices with a collector thickness of 400 nm and BVceo values of 8.4 Volts. Graded-base InP/InGaAs DHBTs with an ft of 135 GHz are also demonstrated. Estimations of the ft*BVceo figure-of-merit are used to compare performance of these devices to existing technologies.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lutz, C.R.
Deluca, P.M.
Stevens, K.S.
Landini, B.E.
Welser, R.E.
Welty, R.J.
Asbeck, P.M.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:36
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