Consistent Large-Signal Modeling of SiGe HBT Devices

Johansen, Tom K. and Vidkjær, Jens and Krozer, Viktor (2004) Consistent Large-Signal Modeling of SiGe HBT Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is investigated. A parameter extraction method is described, including quasi-saturation, substrate parasitics, self-heating and weak avalanche multiplication. Consistency between large-signal and bias-dependent small-signal modeling is assured by extraction several VBIC95 model parameters from a dedicated small-signal model. The VBIC95 model is experimentally verified against DC and RF measurements on a 8x0.35µm 2 area SiGe HBT device.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Johansen, Tom K.
Vidkjær, Jens
Krozer, Viktor
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:13
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