Abstract

In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is investigated. A parameter extraction method is described, including quasi-saturation, substrate parasitics, self-heating and weak avalanche multiplication. Consistency between large-signal and bias-dependent small-signal modeling is assured by extraction several VBIC95 model parameters from a dedicated small-signal model. The VBIC95 model is experimentally verified against DC and RF measurements on a 8x0.35µm 2 area SiGe HBT device.