Consistent Large-Signal Modeling of SiGe HBT Devices

Johansen, Tom K. ; Vidkjær, Jens ; Krozer, Viktor (2004) Consistent Large-Signal Modeling of SiGe HBT Devices. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is investigated. A parameter extraction method is described, including quasi-saturation, substrate parasitics, self-heating and weak avalanche multiplication. Consistency between large-signal and bias-dependent small-signal modeling is assured by extraction several VBIC95 model parameters from a dedicated small-signal model. The VBIC95 model is experimentally verified against DC and RF measurements on a 8x0.35µm 2 area SiGe HBT device.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Johansen, Tom K.
Vidkjær, Jens
Krozer, Viktor
Settori scientifico-disciplinari
DOI
Data di deposito
16 Giu 2005
Ultima modifica
17 Feb 2016 14:13
URI

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