Abstract

An electrothermal characterization of GaAs MESFET has been performed using pulsed measurements. The measurement process has been realized under the same bias conditions at different temperatures of the device. It allows the determination of a nonlinear model at each temperature Moreover the characterization method is based on the electrical measurement of the temperature channel. This specific measurement process under pulsed bias conditions allows to derive a full electrothermal nonlinear model representing the transistor self heating phenomena. The obtained values have been validated by a full three dimensional thermal simulation.